Understanding The Performance Of RF Amplifiers Used In Base Station Applications

n order to properly configure a base station transceiver, designers must understand the performance parameters of the RF amplifiers being used. This not only includes the standard parameters such as gain, noise figure, P1dB, and IP3, but also includes more subtle parameters, including spectral re-growth and power efficiency. The performance of various types of amplifiers will be analyzed in this article to illustrate the advantages and tradeoffs of each type. Also, performance will be analyzed under various bias conditions to understand the tradeoffs between ACPR/ACLR (adjacent channel power) and power efficiency. The article will compare various types of RF amplifiers including GaAs MESFET, InGaP HBT, and GaAs HFET amplifiers. Article

Cree's GaN Wimax amps

Cree release 4 new broadband amps for WiMax market.

The advantage of GaN is that it allows for broader band performance.

- from High Frequency Mag, June 2007

LNAs for Wireless Infrastructure from Sirenza

Here

Two new LNAs released by Sirenza, 400-3000MHz, using E-mode PHEMT technology.

Fri, June 15. 2007

Source: Sirenza Microdevices

Sirenza Microdevices announced the production release of two new additions to Sirenza’s line of high performance products for Mobile WiMAX (802.16 e) and WiFi (802.11 b/g/n) applications. The SZM2166Z and SZM3166Z are new, high linearity power amplifiers increasing the linear power for WiMAX and WiFi Terminals to over +27 dBm, enabling increased range and higher data throughput in consumer terminals and access points.

“Sirenza’s new SZM2166Z and SZM3166Z leverage Sirenza’s extensive experience in developing high power amplifiers, extending our portfolio of leading edge products for the Mobile WiMAX and WiFi markets,” said Jim Spear, Sirenza’s strategic business unit director for wireless access products. “Both devices are optimized to provide the highest level of linear power available thereby allowing our customers to extend the coverage range and increase data rates of Mobile WiMAX and WiFi terminals and access points.”

Produced with InGaP HBT technology, the SZM2166Z operates over the full 2.3 to 2.7 GHz frequency range with 36 dB of gain and provides over +27 dBm of linear power at 2.5 percent EVM. The SZM3166Z operates over the 3.3 to 3.8 GHz frequency band with 35 dB gain and also provides +27 dBm of linear power at 2.5 percent EVM.

Both products operate from a single positive supply and feature an adjustable on chip active bias circuit providing the designer with the flexibility to optimize performance for the specific application. Both products also feature power up/power down control to save power during receive modes and an on chip power detector. The devices are housed in a low cost surface-mount 6x6 QFN package, and have an ESD rating of class 1C (1KV HBM) in accordance with Sirenza’s 3R® program for reliable, rugged and robust performance.

The SZM2166Z and SZM3166 are available for immediate shipment in a RoHS-compliant, lead-free package.